Silicon PNP Power Transistor

DESCRIPTION • High Collector Current-IC= -5.0A • DC Current Gain- : hFE= 70(Min)@IC= -4A • Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A APPLICATIONS • Strobe flash applications. • Audio power amplifier applications.

文件：180.81 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：109.15 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a TO-126F Plastic Package

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features High IC, low VCE(sat). Applications Strobe flash applications, audio power amplifier applications.

文件：1.12785 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：63.78 Kbytes 页数：1 Pages

TEL

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO = -120V(Min) • Complement to Type 2SC3421 APPLICATIONS • Designed for audio frequency poweramplifier applications.

文件：179.81 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage

文件：155.1 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO = -120V(Min) • Complement to Type 2SC3421 APPLICATIONS • Designed for audio frequency poweramplifier applications. • Suitable for driver of 60 to 80 Watts audio amplifier.

文件：105.07 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power amplifier ap

文件：354.04 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car radio and car stereo

文件：205.91 Kbytes 页数：4 Pages

JMNIC

锦美电子