丝印：2SA1300；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES e High DC Current Gain and Excellent he Linearity e Low Saturation Voltage

文件：685.1 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃

文件：134.32 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

PNP Plastic Encapsulated Transistor

FEATURES • High DC Current gain and excellent hFE linearity • Low Saturation Voltage

文件：401.06 Kbytes 页数：2 Pages

SECOS

喜可士

TRANSISTOR (PNP)

FEATURES ● High DC Current gain and excellent hFE linearity ● Low saturation voltage

文件：246.31 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High DC current gain, excellent hFE linearity, low saturation voltage Applications Strobo flash, medium power amplifier applications.

文件：1.16929 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃

文件：66.69 Kbytes 页数：1 Pages

TEL

TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −

文件：153.26 Kbytes 页数：2 Pages

TOSHIBA

东芝

PNP EPITAXIAL SILICON TRANSISTOR

SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent hFELinearity. * hFE(1)=140-600, (VCE= -1V,IC= -0.5A) * hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) * Low Saturation Voltage * VCE (SAT

文件：110.02 Kbytes 页数：3 Pages

UTC

友顺

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base

文件：213.4 Kbytes 页数：1 Pages

DCCOM

道全

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain and Excellent hFE Linearity ● Low Saturation Voltage

文件：883.35 Kbytes 页数：3 Pages

JIANGSU

长电科技