160V/140mA High-Voltage Switching AF 100W Predriver Applications

160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features • Adoption of FBET process. • High breakdown voltage. • Good linearity of hFE and small Cob. • Fast switching speed.

文件：104.94 Kbytes 页数：4 Pages

SANYO

三洋

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications

文件：198.88 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications

文件：213.99 Kbytes 页数：4 Pages

JMNIC

锦美电子

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

文件：227.58 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications

文件：156.72 Kbytes 页数：4 Pages

SAVANTIC

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

文件：227.58 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH VOLTAGE SWITCHING, AF 150W PREDRIVER APPLICATIONS

High Voltage Switching, AF 150W predriver Applications Features Adoption of FBET process High breakdown voltage Good linearity of hFE and small Cob Fast switching speed

文件：274.44 Kbytes 页数：7 Pages

SANYO

三洋

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

文件：203.43 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

文件：200.71 Kbytes 页数：5 Pages

TOSHIBA

东芝

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

文件：1.5215 Mbytes 页数：4 Pages

JIANGSU

长电科技