Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：HO1；Package：SOT-89；Silicon Planar Epitaxial Transistor

FEATURES ● Suitable for output stage of 3 watts amplifier ● Suitable flat package ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2883

文件：171.52 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES Complementary to 2SC2883 Small Flat Package Audio Frequency Amplifier Application

文件：189.2 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2883 ● Small Flat Package ● Audio Frequency Amplifier Application

文件：1.3546 Mbytes 页数：4 Pages

JIANGSU

长电科技

丝印：HO1；Package：SOT-89；Silicon Planar Epitaxial Transistor

FEATURES Suitable for output stage of 3 watts amplifier Suitable flat package PC=1.0 to 2.0W(mounted on ceramic substrate) Complementary to 2SC2883

文件：476.09 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：111.1 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883. Applications Audio frequency amplifier applications.

文件：818.34 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulate Transistors

FEATURES • Suitable for output stage of3 watts Amplifier • Suitable flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • Complementary to 2SC2884

文件：183.81 Kbytes 页数：2 Pages

HOTTECH

合科泰

Plastic-Encapsulate Transistors

SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

文件：101.57 Kbytes 页数：2 Pages

TEL

TRANSISTOR(PNP)

FEATURES ● Complementary to 2SC2884 ● Small Flat Package ● Audio Frequency Amplifier Application ● High DC Current Gain

文件：190.55 Kbytes 页数：1 Pages

HTSEMI

金誉半导体