2N7002W

SMDMOSFET

Features •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@75mA=7.5Ω •Advancedtrenchprocesstechnology. •Highdensitycelldesignforultralowon-resistance. •Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdrivers,relays,displays,lamps, solenoids

2N7002W

SmallSignalMOSFET

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

2N7002W

ESDProtected:1000V

2N7002W

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

2N7002WAX

N-CHANNELENHANCEMENTMODEMOSFET

Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate1KV Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsfor

2N7002W-G

MOSFET

2N7002W-G(N-Channel) RoHSDevice Features -HighdensitycelldesignforlowRDS(ON). -Voltagecontrolsmallsignalswitch. -Ruggedandreliable. -Highsaturationcurrentcapability.

2N7002W-HF

MOSFET

Features -HighdensitycelldesignforlowRDS(ON). -Voltagecontrolledsmallsignalswitch. -Ruggedandreliable. -Highsaturationcurrentcapability.

2N7002W-TP

N-ChannelEnhancementModeFieldEffectTransistor

2N7002X

MOSFET(N-Channel)