2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowON-Resistance •LowInputCapacitance •LowGateThresholdVoltage •FastSwitchingSpeed •LowInput/OutputLeakage •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •Low-OnRe

2N7002W

N-ChannelMOSFET

Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThresholdVoltage:1.5V(TYE) *FastSwitchingSpeed:7ns

2N7002W

60VN-ChannelEnhancementModeMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@75mA=7.5Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:Relays,Displays,Lamps,Solen

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002W

300mAmps,60VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

2N7002W

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃