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2N7002T

N-ChannelPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •LowON-ResistanceandlowInputCapacitance •LowGateThresholdVoltage •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLead

MCCMicro Commercial Components

美微科美微科半导体公司

2N7002T

N-ChannelEnhancementMOSFET

SECOS

SeCoS Halbleitertechnologie GmbH

2N7002T

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagement applications. •DC-DCConverters •Powermanagementfunctions •Battery

DIODESDiodes Incorporated

达尔科技

2N7002T

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA ●RDS(ON)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2N7002T

MOSFET(N-Channel)

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

2N7002T

SOT-523Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected Applications ●DC/DCConverter ●LoadSwitchforPortableDevices ●BatterySwitch

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

2N7002T

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

2N7002T

SmallSignalMOSFETTransistor

FEATURES ●Lowon-resistance. ●Lowgatethresholdvoltge. ●Lowinputcapacitance. ●Fastswitchingspeed. ●Lowinput/outputleakage. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

2N7002T

SOT-523Plastic-EncapsulateMOSFETS

MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halogenfreeproductforpackingcodesuffi

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

2N7002T

SOT-523Plastic-EncapsulateMOSFETS

FEATURE oHighdensitycelldesignforlowRpson) eoltagecontrolledsmallsignalswitch eRuggedandreliable eHighsaturationcurrentcapability APPLICATION ®LoadSwitchforPortableDevices eDC/DCConverter

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

2N7002T

Voltagecontrolledsmallsignalswitch

Features ■HighdensitycelldesignforlowRDS(ON) ■Voltagecontrolledsmallsignalswitch ■Ruggedandreliable ■Highsaturationcurrentcapability Applications ■LoadSwitchforPortableDevices ■DC/DCConverter

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

2N7002T

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2N7002T

SOT-523Plastic-EncapsulateMOSFETS

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

TGS

Tiger Electronic Co.,Ltd

2N7002T

N-ChannelPlastic-EncapsulateMOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SECELECTRONICS

SEC Electronics Inc.

2N7002T

300mA,60VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

2N7002T

MOSFET(N-Channel)

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

2N7002T.

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2N7002TB

60VN-CHANNELENHANCEMENTMODEMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@50mA=7.5Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Relays,Displays,Lamps,Solenoids,Memories,

PANJITPANJIT International Inc.

强茂強茂股份有限公司

详细参数

  • 型号:

    2N7002PT

  • 制造商:

    NXP Semiconductors

  • 功能描述:

    MOSFET N CH 60V 0.31A SOT416

  • 功能描述:

    MOSFET, N CH, 60V, 0.31A, SOT416

  • 功能描述:

    MOSFET, N CH, 60V, 0.31A, SOT416; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    310mA; Drain Source Voltage

  • Vds:

    60V; On Resistance

  • Rds(on):

    1ohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    1.75V; Power ;RoHS

  • Compliant:

    Yes

供应商型号品牌批号封装库存备注价格
NXP(恩智浦)
23+
标准封装
33702
全新原装正品/价格优惠/质量保障
询价
NEXP
24+
SOT523
45000
热卖优势现货
询价
NXP
16+
SOT523
11800
进口原装现货/价格优势!
询价
NEXP
2020+PB
SOT523
11800
原装正品 可含税交易
询价
NXP
17+
NA
6200
100%原装正品现货
询价
CHENMKO
2006+
18000
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
国产
23+
SOT-23
3500
专业优势供应
询价
NXP
16+
NA
8800
诚信经营
询价
NXP
2020+
SOT-23
317845
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NXP
24+
SOT-23
5000
只做原装公司现货
询价
更多2N7002PT供应商 更新时间2024-5-27 10:36:00