丝印：Z1；Package：SOT-416；Logic-level compatible

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ AEC-Q101 quali

文件：332.82 Kbytes 页数：16 Pages

恩XP

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Servo

文件：191.36 Kbytes 页数：5 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor - 0.25Amp 60Volt

□ Feature - Small surface mounting type - High density cell design for low RDS(ON) - Suitable for high packing density - Rugged and reliable - High saturation current capability - Voltage controlled small signal switch □ Application - Servomotor control - Power MOSFET gate drivers - Othe

文件：184.33 Kbytes 页数：5 Pages

SIRECT

矽莱克半导体

丝印：Z1；Package：SOT416；60 V, 310 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  AEC-Q

文件：430.71 Kbytes 页数：17 Pages

NEXPERIA

安世

60 V, 310 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Nexperia

安世