60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：629.87 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：K72；Package：SOT-323；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：629.87 Kbytes 页数：6 Pages

PANJIT

強茂

MV MOSFET

Panjit

強茂

N-Channel MOSFET

FEATURE High density cell design for Low RDS(on) Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP cap

文件：422.73 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：504.36 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Motor Control  Power Management Functions  Backlighting Features

文件：575.09 Kbytes 页数：6 Pages

DIODES

美台半导体