2N7002LL

60V,115mA,N-CHANNELMOSFET

DESCRIPTION TheUTC2N7002LLusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. „FEATURES *RDS(ON)=7.5Ω@VGS=10V *LowReverseTransferCapacitanc

2N7002LL

60V,115mAN-CHANNELPOWERMOSFET

2N7002M

MOSFET(N-Channel)

2N7002MTF

AdvancedSmallSignalMOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

2N7002MTF

N-ChannelSmallSignalMOSFET

2N7002NT

N-ChannelEnhancementModePowerMOSFET

2N7002NXAK

60V,singleN-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •TrenchMOSFETtechnology •ESDprotected 3.Applications

2N7002NXBK

60V,N-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •Elect

2N7002P

60V,0.3AN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■AEC-Q101qua

ETC

2N7002P

60V,360mAN-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •AEC