2N7002M

MOSFET( N-Channel )

2N7002M1PT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE60VoltsCURRENT0.115Ampere FEATURE *Smallsurfacemountingtype.(FBPT-723) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Ser

2N7002MTF

Marking：702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

2N7002MTF

Marking：702；Package：SOT-23；N-Channel Small Signal MOSFET

2N7002MTF_01

N-Channel Small Signal MOSFET

2N7002NT

N-ChannelEnhancementModePowerMOSFET

2N7002NXAK

60V,singleN-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •TrenchMOSFETtechnology •ESDprotected 3.Applications

2N7002NXBK

60V,N-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •Elect

2N7002P

60V,0.3AN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■AEC-Q101qua

2N7002P

60V,360mAN-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •AEC