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2N7002P

Marking:LW;Package:SOT23;60 V, 360 mA N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •AEC

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002PS

Marking:M8;Package:TSSOP6;60 V, 320 mA dual N-channel Trench MOSFET

1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnolog

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002PT

N-Channel Enhancement Mode Field Effect Transistor - 0.25Amp 60Volt

□Feature -Smallsurfacemountingtype -HighdensitycelldesignforlowRDS(ON) -Suitableforhighpackingdensity -Ruggedandreliable -Highsaturationcurrentcapability -Voltagecontrolledsmallsignalswitch □Application -Servomotorcontrol -PowerMOSFETgatedrivers -Othe

SIRECTSirectifier Global Corp.

矽莱克半导体深圳市矽莱克半导体有限公司

2N7002PT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE60VoltsCURRENT0.250Ampere FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Servo

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

2N7002PT

Marking:Z1;Package:SOT416;60 V, 310 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT416(SC-75) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology AEC-Q

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002PV

Marking:ZF;Package:SOT666;60 V, 350 mA dual N-channel Trench MOSFET

1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallSOT666 Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology 3.Ap

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002PW

Marking:X8;Package:SC-70;60 V, 310 mA N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002PW

Marking:72Kc;Package:SOT-323;N-Channel Enhancement Mode MOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

2N7002PW

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    2N7002P

  • 功能描述:

    MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
恩XP
24+
SOT23
8950
BOM配单专家,发货快,价格低
询价
恩XP
24+
标准封装
8048
全新原装正品/价格优惠/质量保障
询价
NEXPERIA/安世
23+
SOT-23
6800
原装正品,实单价格申请
询价
恩XP
16+/17+
SOT-23
3500
原装正品现货供应56
询价
NEXPERIA
23+
SOT23
150000
NXP现货商!常备进口原装库存现货!
询价
Nexperia/安世
21+
SOT-23
18675
十年信誉,只做原装,有挂就有现货!
询价
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NEXP
2020+PB
SOT-23
3500
原装正品 可含税交易
询价
NEXPERIA/安世
2021+
SOT-23
9000
原装现货,随时欢迎询价
询价
NEXPERIA
2024
SOT-23
18365
全新原装正品,现货销售
询价
更多2N7002P供应商 更新时间2025-7-16 16:36:00