60 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • El

文件：288.64 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：D3；Package：SOT1268；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench

文件：317.65 Kbytes 页数：15 Pages

NEXPERIA

安世

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance

文件：240.84 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance

文件：240.84 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance

文件：240.84 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand

文件：304.6 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：7A；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand

文件：304.6 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：7A；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand

文件：304.6 Kbytes 页数：5 Pages

DIODES

美台半导体

FIELD EFFECT TRANSISTOR

文件：57.11 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：819.8 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)