Linear Systems replaces discontinued Siliconix & National

Linear Systems replaces discontinued Siliconix & National 2N5912 The 2N5912 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for us

文件：280.87 Kbytes 页数：1 Pages

MICROSS

DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

文件：146.09 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High-Power Silicon N-P-N Overlay Transistors

Feafures: Low inductance radial ieads ~ particutariy usefuli for strip-iine circuits s Hermetically sealed ceramic-metal package Electrically isolated mounting stud e6 watts minimum output from 2N5915 amplifier at 470 MHz e7-dB gain from 2N5914 driver at 470 MHz

文件：350.2 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

High-Power Silicon N-P-N Overlay Transistors

Feafures: Low inductance radial ieads ~ particutariy usefuli for strip-iine circuits s Hermetically sealed ceramic-metal package Electrically isolated mounting stud e6 watts minimum output from 2N5915 amplifier at 470 MHz e7-dB gain from 2N5914 driver at 470 MHz

文件：350.2 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON NPN TRANSISTOR

SILICON NPN TRANSISTOR 150 AMPERES

文件：321.07 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistors

DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS ·Designed for general purpose power amplifier and switching applications.

文件：141.87 Kbytes 页数：2 Pages

ISC

无锡固电

BIDIRECTIONAL TRANSISTOR

Bidirectional Transistor

文件：68.61 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 10A • Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS • Designed for general purpose power amplifier and switching applications.

文件：130.63 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 10A • Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS • Designed for general purpose power amplifier and switching applications.

文件：142 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 10A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for general purpose power amplifier and switching applications.

文件：127.52 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司