Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

文件：48.15 Kbytes 页数：3 Pages

JMNIC

锦美电子

SI PNP POWER BJT

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

文件：72.38 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

文件：94.95 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

文件：140.27 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

文件：105.06 Kbytes 页数：3 Pages

SAVANTIC

MEDIUM POWER PNP SILICON TRANSISTOR

DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package. It is inteded for use in medium power linear and switching applications. The complementary NPN type is 2N5192. ■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR) APPLICATIONS ■ LINEAR

文件：61.62 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :-1.4V(Max) @IC= -4A

文件：208.8 Kbytes 页数：2 Pages

ISC

无锡固电

MONOLITHIC DUAL N-CHANNEL JFETS

monolithic dual n-channel JFETs designed for ■ Differential Amplifiers ■ FET Input Op Amps BENEFITS ● Minimum System Error and Calibration 5mV Maximum Offset(2N196, 97) ● Low Drift 5μV/°C Maximum (2N5196) ● Simplifies Amplifier Design Low Output Conductance

文件：169.08 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

文件：4.13074 Mbytes 页数：122 Pages

INTERSIL

N-Channel Dual Silicon Junction Field-Effect Transistor

• Differencial Inputs Absolute maximum ratings at TA = 25°C Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating

文件：418.22 Kbytes 页数：1 Pages

INTERFET