2N3

型号：TCR5BM23A；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1.Description TheTCR5BMseriesareCMOSsingle-outputvoltageregulatorswithanon/offcontrolinput,featuringultralowdropoutvoltage,highPSRR,lowinrushcurrentandfastloadtransientresponse. Adifferentiatingfeatureistheuseofasecondarybiasrailasareferencevoltagethat

2N3810K1

型号：2N3810K1；Package：Flat-8；Rad-Hard 60 V, 0.05 A PNP dual matched transistor

Features •Hermeticpackages •ESCCandJANSqualified •Upto100krad(Si)lowdoserate Description 2N3810KandSOC3810HRaresiliconplanarPNPdualmatchedtransistors packagedinFlat-8andLCC-6respectivelyandavailablein100kradversions.They arespecificallydesignedforaero

2N3828

型号：2N3828；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features GeneralPurposeAmplifierTransistor

2N3828

型号：2N3828-TA；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features GeneralPurposeAmplifierTransistor

2N3904

型号：2N3904；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications Ascomplementarytype,thePNPtransistor2N3906is Recommended ThistransistorisalsoavailableintheSOT-23casewith thetypedesignationMMBT3904

2N3904

型号：2N3904-TA；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications Ascomplementarytype,thePNPtransistor2N3906is Recommended ThistransistorisalsoavailableintheSOT-23casewith thetypedesignationMMBT3904

2N3906

型号：2N3906；Package：T0-92；T0-92 Plastic-Encapsulate Transistors

FEATURE§ ®PNPsiliconepitaxialplanartransistorforswitchingand Amplifierapplications ®Ascomplementarytype,theNPNtransistor2N3904is Recommended ®ThistransistorisalsoavailableintheSOT-23casewith thetypedesignationMMBT3906

2N3906

型号：2N3906-HF；Package：TO-92；General Purpose Transistor

Features -PNPsiliconepitaxialplanartransistorfor switchingandamplifierapplications.

2N3H

型号：OPA2387DSGR；Package：WSON；OPAx387 Ultra-High Precision, Zero-Drift, Low-Input-Bias-Current Op Amps

1Features •Ultra-lowoffsetvoltage:±2μV(maximum,tested) •Zerodrift:±0.003μV/°C •Low-inputbiascurrent:150pA(maximum,tested) •Lownoise:8.5nV√Hzat1kHz •No1/fnoise:177nVPP(0.1Hzto10Hz) •Common-modeinputrange±100mVbeyond supplyrails •Gainbandwidth:5.

2N3H

型号：OPA2387DSGT；Package：WSON；OPAx387 Ultra-High Precision, Zero-Drift, Low-Input-Bias-Current Op Amps

1Features •Ultra-lowoffsetvoltage:±2μV(maximum,tested) •Zerodrift:±0.003μV/°C •Low-inputbiascurrent:150pA(maximum,tested) •Lownoise:8.5nV√Hzat1kHz •No1/fnoise:177nVPP(0.1Hzto10Hz) •Common-modeinputrange±100mVbeyond supplyrails •Gainbandwidth:5.