650 V half bridge gate driver with integrated bootstrap diode

Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of -100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low

文件：776.08 Kbytes 页数：26 Pages

Infineon

英飞凌

650 V half bridge gate driver with integrated bootstrap diode

文件：1.15713 Mbytes 页数：25 Pages

Infineon

英飞凌

650 V half-bridge gate driver with integrated bootstrap diode

\n优势:\n• Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design\n• 50% lower level-shift losses\n• Excellent ruggedness and noise immunity against negative transient voltages on VS pin;

Infineon

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：LEVEL SHIFT SOI

Infineon

英飞凌