PNP HIGH VOLTAGE SWITCHING TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications. Features • BVCEO > -400V • IC = -0.5A Continuous Collector Current • ICM = -1A Peak Pulse Current • High Gain Holds up hFE ≥ 140 @ IC = -100mA • Totally Lead-Free &am

文件：378.84 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 400V 0.5A SOT89-3

DIODES

美台半导体

400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89

Features • BVCEO > -400V • IC = -0.5A Continuous Collector Current • ICM = 1A Peak Pulse Current • High Gain Holds up hFE ≥ 140 @ IC = -100mA • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standar

文件：281.8 Kbytes 页数：7 Pages

DIODES

美台半导体

硅堆

DY

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模块

FUJI

富士通

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