丝印：25N；Package：SOT-23；PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE

文件：54.07 Kbytes 页数：4 Pages

Zetex

丝印：25N06；Package：TO-252；60V N-Channel Power Mosfet

Features VDS = 60V,ID =25A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100 Single Pulse avalanche energy Test

文件：780.34 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：25N06；Package：TO-252；60V N-Channel Power Mosfet

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =25A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Swit

文件：735.18 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：25N08LF2；Package：PG-TDSON-8FL；OptiMOSTM 5 Linear FET 2, 80 V

Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.3538 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：25N1200；Package：TO-247；Insulated-Gate Bipolar Transistor in a TO-247 Plastic Package.

Features Low gate charge,, Low saturation voltage , Positive temperature coefficient, RoHS product. Applications General purpose inverter, Frequency converters, Induction Heating(IH), Uninterrupted PowerSupply(UPS).

文件：1.42426 Mbytes 页数：8 Pages

RECTRON

丽正国际

丝印：25N1200；Package：TO-3P；Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Features Low gate charge,, Low saturation voltage , Positive temperature coefficient, RoHS product. Applications General purpose inverter, Frequency converters, Induction Heating(IH), Uninterrupted PowerSupply(UPS).

文件：983.21 Kbytes 页数：10 Pages

RECTRON

丽正国际

丝印：25N100；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =100V,ID =25A RDS(ON) 25mΩ @ VGS=10V RDS(ON) 38mΩ @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation

文件：731.45 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25NF06；Package：D2PAK；Automotive-grade N-channel 60 V, 0.056 Ω typ., 19 A STripFET™ II Power MOSFET in a D²PAK package

Features  Designed for automotive applications and AEC-Q101 qualified  100 avalanche tested  Application-oriented characterization Applications  Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically d

文件：817.74 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：25NF06L；Package：D2PAK；Automotive-grade N-channel 60 V, 53 mΩ typ., 20 A STripFET™ II Power MOSFET in a D²PAK package

Features  AEC-Q101 qualified  Exceptional dv/dt capability  100 avalanche tested  Low gate charge Applications  Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capac

文件：859.22 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：25N60M2EP；Package：TO-220；N-channel 600 V, 0.175 廓 typ., 18 A MDmesh??M2 EP Power MOSFET in a TO-220 package

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching loss

文件：253.69 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体