25N

型号：ZR25D；Package：SOT-23；PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE

25N06

型号：25N06；Package：TO-252；60V N-Channel Power Mosfet

Features VDS=60V,ID=25A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V FastSwitching LowONResistance(Rdson≤29mΩ) LowGateCharge LowReversetransfercapacitances 100SinglePulseavalancheenergyTest

25N06

型号：25N06；Package：TO-252；60V N-Channel Power Mosfet

GeneralDescription TheseN-channelenhancementmodepowermosfetsused advancedtrenchtechnologydesign,providedexcellentRdson andlowgatecharge.WhichaccordswiththeRoHSstandard. Features VDS=60V,ID=25A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V FastSwit

25N08LF2

型号：ISC025N08NM5LF2；Package：PG-TDSON-8FL；OptiMOSTM 5 Linear FET 2, 80 V

Features •Idealforhot-swap,batteryprotectionande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

25N1200

型号：RI25N1200T7；Package：TO-247；Insulated-Gate Bipolar Transistor in a TO-247 Plastic Package.

Features Lowgatecharge,,Lowsaturationvoltage, Positivetemperaturecoefficient,RoHSproduct. Applications Generalpurposeinverter,Frequencyconverters, InductionHeating(IH),UninterruptedPowerSupply(UPS).

25N1200

型号：RI25N1200TP；Package：TO-3P；Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Features Lowgatecharge,,Lowsaturationvoltage, Positivetemperaturecoefficient,RoHSproduct. Applications Generalpurposeinverter,Frequencyconverters, InductionHeating(IH),UninterruptedPowerSupply(UPS).

25N100

型号：RM25N100DF；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=100V,ID=25A RDS(ON)25mΩ@VGS=10V RDS(ON)38mΩ@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation

25NF06

型号：STB25NF06AG；Package：D2PAK；Automotive-grade N-channel 60 V, 0.056 Ω typ., 19 A STripFET™ II Power MOSFET in a D²PAK package

Features Designedforautomotiveapplicationsand AEC-Q101qualified 100avalanchetested Application-orientedcharacterization Applications Switchingapplications Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET™process isspecificallyd

25NF06L

型号：STB25NF06LAG；Package：D2PAK；Automotive-grade N-channel 60 V, 53 mΩ typ., 20 A STripFET™ II Power MOSFET in a D²PAK package

Features AEC-Q101qualified Exceptionaldv/dtcapability 100avalanchetested Lowgatecharge Applications Switchingapplications Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET™process isspecificallydesignedtominimizeinput capac

25N60M2EP

型号：STP25N60M2-EP；Package：TO-220；N-channel 600 V, 0.175 廓 typ., 18 A MDmesh??M2 EP Power MOSFET in a TO-220 package

Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh™M2EPenhanced performancetechnology.Thankstoitsstrip layoutandanimprovedverticalstructure,the deviceexhibitslowon-resistance,optimized switchingcharacteristicswithverylowturn-off switchingloss