APM2312A

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

APM2312AC-TR

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

BC2312

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications

BLM2312

N-ChannelEnhancementModePowerMOSFET

CES2312

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2312

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

CHT2312PT

N-ChannelEnhancementModeFieldEffectTransistor

CJ2312

SOT-23Plastic-EncapsulateMOSFETS

CJ2312

N-Channel20-V(D-S)MOSFET

CJ2312

N-Channel20V(D-S)MOSFET