MAGNEHELIC® DIFFERENTIAL PRESSURE GAGES Indicate Positive, Negative or Differential, Accurate within 1%

BENEFITS/FEATURES • Easy to read gage through undistorted plastic face permits viewing from far away • Patented design provides quick response to pressure changes means no delay in assessing critical situations • Durable and rugged housing and high-quality components combine to provide longserv

文件：1.84653 Mbytes 页数：4 Pages

DWYER

Adafruit Perma-Proto HAT for Pi Mini Kit - No EEPROM

文件：182.64 Kbytes 页数：4 Pages

ADAFRUIT

Nylon Hose Clamps

文件：116.22 Kbytes 页数：1 Pages

HEYCO

KNOB

文件：71.12 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Pneumatic muffler

文件：93.29 Kbytes 页数：1 Pages

FESTOFesto Corporation.

费斯托费斯托（中国）有限公司

丝印：2310；Package：SOT-23；MOSFET

Features - Improved dv/dt capability. - Fast switching. - RDS(ON)≤100mΩ@VGS=10V. - AEC-Q101 Qualified.

文件：498.29 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：754.42 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：686.53 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：2310；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =3A RDS(ON)

文件：305.66 Kbytes 页数：7 Pages

RECTRON

丽正

实验室温度计

Kessler