丝印：230；Package：TSOT-23；24V 3A Integrated Switching Regulator

▪ 4.5V to 24V input supply range ▪ Up to 3A output current ▪ Integrated high-side (85mΩ) and low-side (45mΩ) MOSFETs ▪ 400μA quiescent current ▪ Minimum on-time of 60ns ▪ Minimum off-time of 275ns ▪ 0.765V reference voltage with 2% accuracy ▪ PFM mode under light load condition ▪ Curr

文件：4.07281 Mbytes 页数：24 Pages

RENESAS

瑞萨

丝印：230；300 mA, 28 V low-dropout voltage regulator, with 5 關A quiescent current

文件：721.63 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

丝印：2300F；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 2300F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：984.1 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2300F；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 2300FA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.15718 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2301；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：821.94 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2301；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01208 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2301H；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：857.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2301H；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：848.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2302；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 2302 uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：657.06 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2302；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 2302A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：685.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体