ACMS2304T-HF

Marking：2304；Package：SOT-23；MOSFET

Features -RDS(ON)

RM2304E

Marking：2304；Package：SOT-23；N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

FEATURES RDS(ON)

FTK2304

Marking：2304；Package：sot-23；The FTK2304 uses advanced trench technology to

RM04N30S2

Marking：2304；Package：SOT-23；This device is suitable for use as a load switch or in PWM applications

RM2304

Marking：2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

RM3A6N30S2

Marking：2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

MK2304S-1ILF

Marking：2304S1IL；Package：SOIC；ZERO DELAY, LOW SKEW BUFFER

Features •Packagedin8-pinSOIC •Zeroinput-outputdelay •2banksoftwo1Xoutputs •Outputtooutputskewislessthan200ps •Outputclocksupto133MHzat3.3V •FullCMOSoutputswith8mAoutputdrivecapabilityat TTLlevelsat3.3V •SpreadSmartTMtechnologyWorkswithSpr

MK2304S-1ILFT

Marking：2304S1IL；Package：SOIC；ZERO DELAY, LOW SKEW BUFFER

Features •Packagedin8-pinSOIC •Zeroinput-outputdelay •2banksoftwo1Xoutputs •Outputtooutputskewislessthan200ps •Outputclocksupto133MHzat3.3V •FullCMOSoutputswith8mAoutputdrivecapabilityat TTLlevelsat3.3V •SpreadSmartTMtechnologyWorkswithSpr

MK2304S-1LF

Marking：2304S-1L；Package：SOIC；ZERO DELAY, LOW SKEW BUFFER

Features •Packagedin8-pinSOIC •Zeroinput-outputdelay •2banksoftwo1Xoutputs •Outputtooutputskewislessthan200ps •Outputclocksupto133MHzat3.3V •FullCMOSoutputswith8mAoutputdrivecapabilityat TTLlevelsat3.3V •SpreadSmartTMtechnologyWorkswithSpr

MK2304S-1LFT

Marking：2304S-1L；Package：SOIC；ZERO DELAY, LOW SKEW BUFFER

Features •Packagedin8-pinSOIC •Zeroinput-outputdelay •2banksoftwo1Xoutputs •Outputtooutputskewislessthan200ps •Outputclocksupto133MHzat3.3V •FullCMOSoutputswith8mAoutputdrivecapabilityat TTLlevelsat3.3V •SpreadSmartTMtechnologyWorkswithSpr