RM2304

Marking：2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

RM2304E

Marking：2304；Package：SOT-23；N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

FEATURES RDS(ON)

RN2304

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1301~1306

RSZ-2304

1WattSMDMiniatureIsolatedSingleOutput

RSZ-2304HP

1WattSMDMiniatureIsolatedSingleOutput

SE2304

SOT-23Plastic-EncapsulateMOSFETS

SF2304B

175MHzSAWFilter

SI2304

N-ChannelEnhancementModeFieldEffectTransistor

SI2304

N-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •30V,2.5A,RDS(ON)=65mΩ@VGS=10V 30V,2.0A,

SI2304

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology Productavailability: SI2304DSinSOT23. Features ■TrenchMOS™technology ■Veryfastswitching ■Subminiaturesurfacemountpackage. Applications ■Batterymanagement