丝印：2301；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01208 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

9V P channel enhanced MOS FET

文件：194.72 Kbytes 页数：3 Pages

FUMAN

富满微

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes 页数：14 Pages

NSC

国半

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes 页数：14 Pages

NSC

国半

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

文件：22.14 Kbytes 页数：2 Pages

NTE