丝印：2301H；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：857.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2301H；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：848.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2301H；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：857.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2301H；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：848.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体