RAA239101A2GNPHA0

Marking：239101；Package：32LDQFN；Photoelectric Smoke Detector AFE IC

Features •Ultra-lowcurrentconsumption •9Vor3Vto5Vbatteryoperation •LDOformicrocontrollersupply •10-bitADCformeasuringvoltageon7analogpins •DrivestwoLEDemitterswith8-bitcurrentDAC controlfrom45mAto600mA •Twophotodiodereceiverswithprogrammablegain ampl

RM2301E

Marking：2301E；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-20V,ID=-2.6A RDS(ON)

RM2301S9

Marking：2301；Package：SOT-363；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-20V,ID=-3A RDS(ON)

RM2303

Marking：2303；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-30V,ID=-2.0A RDS(ON)

RM2304E

Marking：2304；Package：SOT-23；N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

FEATURES RDS(ON)

RM2306E

Marking：2306；Package：SOT-23；N-Channel 30V (D-S) MOSFET , ESD Protected

FEATURES RDS(ON)

RM2308

Marking：2308；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=3A RDS(ON)

RM2309E

Marking：2309E；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures ESDRating:2000VHBM Highpowerandcurrenthandingcapability Leadfreeproductisacquired Surfacemountpackage VDS=-30V,ID=-3.5A RDS(ON)

RM230N85HD

Marking：230N85；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Features BV285VIb238A Ptot

RM2310

Marking：2310；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=3A RDS(ON)