MK2308G-1HILFTR

Marking：23081HIL；Package：TSSOP；3.3 VOLT ZERO DELAY, LOW SKEW BUFFER

Features •Clockoutputsfrom10to133MHz •Zeroinput-outputdelay •Eightlowskew(

MK2308G-1HLF

Marking：2308G1HL；Package：TSSOP；3.3 VOLT ZERO DELAY, LOW SKEW BUFFER

Features •Clockoutputsfrom10to133MHz •Zeroinput-outputdelay •Eightlowskew(

MK2308G-1HLFTR

Marking：2308G1HL；Package：TSSOP；3.3 VOLT ZERO DELAY, LOW SKEW BUFFER

Features •Clockoutputsfrom10to133MHz •Zeroinput-outputdelay •Eightlowskew(

MK2308S-2ILF

Marking：2308S-2ILF；Package：SOIC；ZERO DELAY, LOW SKEW BUFFER

Features •Packagedin16-pinSOIC •Pb(lead)freepackage •Zeroinput-outputdelay •Four1Xoutputsplusfour1/2Xoutputs •Outputtooutputskewislessthan250ps •Outputclocksupto133.3MHzat3.3V •Abilitytogenerate2Xtheinput •FullCMOSoutputswith18mAoutputdrive

MK2308S-2ILFT

Marking：2308S-2ILF；Package：SOIC；ZERO DELAY, LOW SKEW BUFFER

Features •Packagedin16-pinSOIC •Pb(lead)freepackage •Zeroinput-outputdelay •Four1Xoutputsplusfour1/2Xoutputs •Outputtooutputskewislessthan250ps •Outputclocksupto133.3MHzat3.3V •Abilitytogenerate2Xtheinput •FullCMOSoutputswith18mAoutputdrive

NCE2301F

Marking：2301FX；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE2301Fusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas1.8V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-20V,ID=-2A RDS(ON)

NCE2308X

Marking：2308X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE2308Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE2309

Marking：2309；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE2309usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(V6.0ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.GeneralFeatures ●VDS=-60V,ID=-1.6A RDS(ON)

NCE2312X

Marking：2312X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE2312Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas1.8V.Thisdeviceissuitableforuseasa uni-directionalorbi-directionalloadswitch. GeneralFeatures ●VDS=20V,ID=6A RDS(ON)

NCE2323

Marking：2323X；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE2323usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-20V,ID=-4.1A RDS(ON)