丝印：2301F；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

文件：584.85 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：2301FX；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2 A RDS(ON)

文件：266.56 Kbytes 页数：7 Pages

NCEPOWER

新洁能