SMAJ210A

Marking：210A；Package：DO-214AC；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Glasspassivatedjunction Lowinductance Excellentclampingcapability 400Wpeakpulsepowercapabilityat10/1000μswaveform, repetitionrate(dutycycle):0.01% Fastresponsetime Typical

SMBJ210A

Marking：210A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01% Fast

SMBJ33CA

Marking：210CA；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01% Fast

SPB21N50C3

Marking：21N50C3；Package：PG-TO263；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC)fortargetapplications

STB21N65M5

Marking：21N65M5；Package：D2PAK；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STF21N65M5

Marking：21N65M5；Package：TO-220FP；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STF21P6LLF6

Marking：21P6LLF6；Package：TO-220FP；P-channel -60 V, 25.5 mΩ typ., -21 A STripFET™ F6 Power MOSFET in a TO-220FP package

Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness Lowgatedrivepowerloss Applications Switchingapplications Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™F6technology, withanewtrenchgatestructure.Th

STI21N65M5

Marking：21N65M5；Package：I2PAK；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STP21N65M5

Marking：21N65M5；Package：TO-220；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STW21N65M5

Marking：21N65M5；Package：TO-247；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda