B2100W-S

Marking：210；Package：SOD-123S；2A Surface Mount Schottky Barrier Rectifiers

Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-fre

B2100W-ST

Marking：210；Package：SOD-123ST；2A Surface Mount Schottky Barrier Rectifiers

Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-fre

KTY82/210

Marking：210；Package：SOT-23；Silicon temperature sensors

Generaldescription ThetemperaturesensorsintheKTY82serieshaveapositivetemperaturecoefficientofresistanceandaresuitableforuseinmeasurementandcontrolsystems.ThesensorsareencapsulatedinthesmallplasticSurfaceMountedDevice(SMD)SOT23package. Otherspecialselec

KTY82SLASH210

Marking：210；Package：SOT-23；Silicon temperature sensors

Generaldescription ThetemperaturesensorsintheKTY82serieshaveapositivetemperaturecoefficientofresistanceandaresuitableforuseinmeasurementandcontrolsystems.ThesensorsareencapsulatedinthesmallplasticSurfaceMountedDevice(SMD)SOT23package. Otherspecialselec

DRV8210DSGR

Marking：210；Package：WSON；DRV8210 11-V H-Bridge Motor Driver with PWM, PH/EN, and Half-Bridge Control Interfaces and Low-Power Sleep Mode

DRV8210DSGR

Marking：210；Package：WSON；DRV8210 11V H-Bridge Motor Driver with PWM, PH/EN, and Half-Bridge Control Interfaces and Low-Power Sleep Mode

DRV8210DSGR

Marking：210；Package：WSON；DRV8210 11-V H-Bridge Motor Driver with PWM, PH/EN, and Half-Bridge Control Interfaces and Low-Power Sleep Mode

ACDBB2100-HF

Marking：2100；Package：DO-214AA；SMD Schottky Barrier Rectifiers

Features -Lowprofilepackage. -Idealforautomatedplacement. -GuardRingforovervoltageprotection. -Lowforwardvoltagedrop. -ComplywithAEC-Q101

IPTG210N25NM3FD

Marking：210N25NF；Package：PG-HSOG-8-1；OptiMOSTM 3 Power-Transistor, 250 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Fastdiode(FD)withreducedQrr •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforhardcommutationruggedness

ISL21007CFB812Z

Marking：21007CFZ12；Package：8LdSOIC；Precision, Low Noise FGA Voltage References

Precision,LowNoiseFGAVoltageReferences TheISL21007FGA™voltagereferencesareextremelylowpower,highprecision,andlownoisevoltagereferencesfabricatedonIntersil’sproprietaryFloatingGateAnalog(FGA)technology.TheISL21007featuresverylownoise(4.5µVP-Pfor0.1Hzto10Hz)