LT219-3

Marking：219-3；Photo DMOS-FET Relay

Description TheLT219-3isaminiature1-FormAsolidstaterelayina4pinSOPpackagethat employsopticallycoupledMOSFETtechnologytoprovide1500Vofinputtooutput isolation.TheopticallycoupledinputiscontrolledbyahighlyefficientGaAlAsinfrared LEDandMOSFETsontheoutpu

MA211KP4A

Marking：211K；Package：SIP-4L；Complementary Output Hall Effect Fan Driver

GENERALDESCRIPTION MA211KareintegratedHallsensorswithoutputdrivers,mainlydesignedforelectronic commutationofbrush-lessDCFan.ThisICisusingHVBCDprocessinternallyincludesthe regulator,protectingdiode,Hallplate,amplifier,comparator,andapairofcomplementary open-

MA211P4A

Marking：211F；Package：SIP-4L；Complementary Output Hall Effect Fan Driver

GENERALDESCRIPTION MA211FareintegratedHallsensorswithoutputdrivers,mainlydesignedforelectronic commutationofbrush-lessDCFan.ThisICisusingHVBCDprocessinternallyincludesthe regulator,protectingdiode,Hallplate,amplifier,comparator,andapairofcomplementary open-

OPA2140AIDGKR

Marking：2140；Package：VSSOP；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1Features •Very-lowoffsetdrift:1μV/°Cmaximum •Very-lowoffset:120μV •Lowinputbiascurrent:10pAmaximum •Very-low1/fnoise:250nVPP,0.1Hzto10Hz •Lownoise:5.1nV/√Hz •Slewrate:20V/μs •Lowsupplycurrent:2mAmaximum •InputvoltagerangeincludesV–supply •

OPA2140AIDGKT

Marking：2140；Package：VSSOP；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1Features •Very-lowoffsetdrift:1μV/°Cmaximum •Very-lowoffset:120μV •Lowinputbiascurrent:10pAmaximum •Very-low1/fnoise:250nVPP,0.1Hzto10Hz •Lownoise:5.1nV/√Hz •Slewrate:20V/μs •Lowsupplycurrent:2mAmaximum •InputvoltagerangeincludesV–supply •

PJMB210N65EC

Marking：210N65EC；Package：TO-263；650VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:210mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-263package Terminals:SolderableperMIL-STD-750,Method2026 Approx.W

PJMF210N65EC

Marking：210N65EC；Package：ITO-220AB-F；650VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:210mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:ITO-220AB-Fpackage Terminals:SolderableperMIL-STD-750,Method2026 App

PJMP210N65EC

Marking：210N65EC；Package：TO-220AB-L；650V N-Channel Super Junction MOSFET

Feature: RDS(ON)Max,VGS@10V:210mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-220AB-Lpackage Terminals:

PS7A21105PQWDRBRQ1

Marking：21105P；Package：SON；TPS7A21-Q1 Automotive, 500mA, Low-Noise, Low-IQ, High-PSRR LDO

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C –Junctiontemperature:–40°Cto+150°C •VerylowIQ:6.5μA •Inputvoltagerange:2.0Vto6.0V •Outputvoltagerange:0.8Vto5.5V(50mVsteps) •HighPSRR:91dBat1kHz •Lowoutputvolt

PS7A21105PQWDRBRQ1

Marking：21105P；Package：SON；TPS7A21-Q1 Automotive, 500mA, Low-Noise, Low-IQ, High-PSRR LDO

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C –Junctiontemperature:–40°Cto+150°C •VerylowIQ:6.5μA •Inputvoltagerange:2.0Vto6.0V •Outputvoltagerange:0.8Vto5.5V(50mVsteps) •HighPSRR:91dBat1kHz •Lowoutputvolt