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RM21N650TI

Marking:21N650;Package:TO-220F;N-Channel Super Junction Power MOSFET III

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses. Smallpackage UltraLowGateChargecauselowerdrivingrequirements. 100%AvalancheTested ROHScompliant

RECTRON

Rectron Semiconductor

RM21N650TI

Marking:21N650;Package:TO-220F;N-Channel Super Junction Power MOSFET III

Features Newtechnologyforhighvoltagedevice. Lowon-resistanceandlowconductionlosses Smallpackage. UltraLowGateChargecauselowerdrivingrequirements 100%AvalancheTested OHScompliant

RECTRON

Rectron Semiconductor

RS31211AR

Marking:211A;Package:WSON-8;Simple 3.3V/5V/12V 4A eFuse Protection Switches

Features •RS31211-3.3VeFuse •RS31212-5VeFuse •RS31309–2.97Vto18Vinput •RS31311-12VeFuse •Integrated34mΩPassMOSFET •Adjustable0.5Ato4Acurrentlimit •Adjustableoutputslewrate •EnablewithadjustableinputUVLOthreshold •Fixedover-voltagecamp:3.8VforRS3

REED

Reed Semiconductor Corp.

RS31211BR

Marking:211B;Package:WSON-8;Simple 3.3V/5V/12V 4A eFuse Protection Switches

Features •RS31211-3.3VeFuse •RS31212-5VeFuse •RS31309–2.97Vto18Vinput •RS31311-12VeFuse •Integrated34mΩPassMOSFET •Adjustable0.5Ato4Acurrentlimit •Adjustableoutputslewrate •EnablewithadjustableinputUVLOthreshold •Fixedover-voltagecamp:3.8VforRS3

REED

Reed Semiconductor Corp.

RS31211DR

Marking:211D;Package:WSON-8;Simple 3.3V/5V/12V 4A eFuse Protection Switches

Features •RS31211-3.3VeFuse •RS31212-5VeFuse •RS31309–2.97Vto18Vinput •RS31311-12VeFuse •Integrated34mΩPassMOSFET •Adjustable0.5Ato4Acurrentlimit •Adjustableoutputslewrate •EnablewithadjustableinputUVLOthreshold •Fixedover-voltagecamp:3.8VforRS3

REED

Reed Semiconductor Corp.

RS31212AR

Marking:212A;Package:WSON-8;Simple 3.3V/5V/12V 4A eFuse Protection Switches

Features •RS31211-3.3VeFuse •RS31212-5VeFuse •RS31309–2.97Vto18Vinput •RS31311-12VeFuse •Integrated34mΩPassMOSFET •Adjustable0.5Ato4Acurrentlimit •Adjustableoutputslewrate •EnablewithadjustableinputUVLOthreshold •Fixedover-voltagecamp:3.8VforRS3

REED

Reed Semiconductor Corp.

RS31212BR

Marking:212B;Package:WSON-8;Simple 3.3V/5V/12V 4A eFuse Protection Switches

Features •RS31211-3.3VeFuse •RS31212-5VeFuse •RS31309–2.97Vto18Vinput •RS31311-12VeFuse •Integrated34mΩPassMOSFET •Adjustable0.5Ato4Acurrentlimit •Adjustableoutputslewrate •EnablewithadjustableinputUVLOthreshold •Fixedover-voltagecamp:3.8VforRS3

REED

Reed Semiconductor Corp.

RS31212CR

Marking:212C;Package:WSON-8;Simple 3.3V/5V/12V 4A eFuse Protection Switches

Features •RS31211-3.3VeFuse •RS31212-5VeFuse •RS31309–2.97Vto18Vinput •RS31311-12VeFuse •Integrated34mΩPassMOSFET •Adjustable0.5Ato4Acurrentlimit •Adjustableoutputslewrate •EnablewithadjustableinputUVLOthreshold •Fixedover-voltagecamp:3.8VforRS3

REED

Reed Semiconductor Corp.

RS31212DR

Marking:212D;Package:WSON-8;Simple 3.3V/5V/12V 4A eFuse Protection Switches

Features •RS31211-3.3VeFuse •RS31212-5VeFuse •RS31309–2.97Vto18Vinput •RS31311-12VeFuse •Integrated34mΩPassMOSFET •Adjustable0.5Ato4Acurrentlimit •Adjustableoutputslewrate •EnablewithadjustableinputUVLOthreshold •Fixedover-voltagecamp:3.8VforRS3

REED

Reed Semiconductor Corp.

SMAJ180CA

Marking:210CA;Package:DO-214AC;Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Glasspassivatedjunction Lowinductance Excellentclampingcapability 400Wpeakpulsepowercapabilityat10/1000μswaveform, repetitionrate(dutycycle):0.01% Fastresponsetime Typical

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

详细参数

  • 型号:

    21

  • 制造商:

    Harting Technology Group

  • 功能描述:

    SEALING CAP M12 Plastic

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TI
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更多21供应商 更新时间2025-6-24 18:04:00