Stansard SCRs, 20A

文件：592.39 Kbytes 页数：5 Pages

NELLSEMI

尼尔半导体

Quick Start Guide 7500N Series Modular Data Center Switches

文件：6.0297 Mbytes 页数：80 Pages

ARISTA

丝印：20P06；Package：TO-252；P-Channel Enhancement Mode MOSFET

Features * Vos =-60V,lo =-16A Ros 52mQ @ Vos=-10V (Typ)

文件：1.84072 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：20P05Y；Package：SOT23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P05Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -5A RDS(ON)

文件：298.56 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：20P07N；Package：SOT23-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-7A RDS(ON)

文件：282.46 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：20P10J；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P10J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -10A RDS(ON)

文件：259.45 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：20P85GU；Package：DFN5x6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P85GU uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Load switch ● Battery protection General Features ● VDS =-20V,ID =-85A RDS(ON)

文件：287.49 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：20P10；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-100V,ID =-20A RDS(ON)

文件：214.87 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20P30；Package：DFN3.3X3.3；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -30V,ID = -20A RDS(ON)

文件：793.88 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20P7C；Package：SOT-23；20V P-Channel Enhancement Mode MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

文件：1.74422 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子