General purpose inverters

文件：820.86 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：20N1200；Package：TO-247；1200V/20A RC-IGBT

General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as inductive cooking. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC Low induc

文件：150.71 Kbytes 页数：8 Pages

RECTRON

丽正国际

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode\n\nThe HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs\nand bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b  45A, 1200V, TC = 25oC\n 1200V Switching SOA Capability\n Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150oC\n Short Circuit Rating\n Low Conduction Loss;

Renesas

瑞萨

绝缘栅双极型晶体管/IGBT-IGBT

JSMC

华微电子