4 V, 30 mA low Cd Schottky barrier diode

General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Features ■ Very low diode capacitance ■ Very low forward voltage ■ Very small SMD plastic packages Applications ■ Digital applications: ◆ Ultra high-speed switching

文件：49.75 Kbytes 页数：8 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：N2；Package：SOT666；4 V, 30 mA low capacitance Schottky barrier diode

1. General description Triple isolated planar low capacitance Schottky barrier diode encapsulated in a SOT666 ultra small flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 3 isolated diodes • Very low diode capacitance • Very low forward voltage • Ultra sm

文件：180.92 Kbytes 页数：7 Pages

NEXPERIA

安世

5 V, 20 mA low Cd Schottky barrier diodes

General description Planar low capacitance Schottky barrier diodes encapsulated in ultra small SMD plastic packages. Features ■ Very low diode capacitance ■ Very low forward voltage ■ Ultra small SMD plastic packages. Applications ■ Digital applications: ◆ Ultra high-speed switching

文件：53.28 Kbytes 页数：10 Pages

PHI

PHI

15 V, 30 mA low Cd Schottky barrier diodes

General description Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic packages. Features ■ Low diode capacitance ■ Low forward voltage ■ Very small SMD plastic packages Applications ■ Digital applications: ◆ Ultra high-speed switching

文件：116.27 Kbytes 页数：10 Pages

恩XP

丝印：N5；Package：SOT666；15 V, 30 mA low Cd Schottky barrier diodes

1.1 General description Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic packages. 1.2 Features Low diode capacitance Low forward voltage Very small SMD plastic packages 1.3 Applications Digital applications: Ultra high-speed switching Clampi

文件：697.18 Kbytes 页数：10 Pages

NEXPERIA

安世

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Schottky barrier (double) diodes

Features ● Low forward voltage ● Guard ring protected ● Very small plastic SMD package

文件：49.57 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：70；Package：SC-70；Schottky barrier single diode

1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 3. Applicatio

文件：595.22 Kbytes 页数：9 Pages

NEXPERIA

安世

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT323 very small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Low forward voltage • Guard ring protected • Very small plastic SMD package. APPLICATIONS • Ultra high-speed s

文件：62.64 Kbytes 页数：8 Pages

PHI

PHI