1PS70SB10

Marking：70；Package：SC-70；Schottky barrier single diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection, encapsulatedinaverysmallSOT323Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •Lowcapacitance •AEC-Q101qualified 3.Applicatio

1PS70SB10-Q

Marking：70；Package：SOT323；Schottky barrier single diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina verysmallSOT323Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101and

BAS70XY

Marking：70；Package：TSSOP6；General-purpose quadruple Schottky diode

1.Generaldescription General-purposequadrupleSchottkydiodeinaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applications •Ultrahigh-sp

BAS70XY-Q

Marking：70；Package：TSSOP6；General-purpose quadruple Schottky diode

1.Generaldescription General-purposequadrupleSchottkydiodeinaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101

BZX84-B16

Marking：70；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

2N7000

Marking：702；Package：SOT-23；N-Channel Enhancement Mode MOSFET

■Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

2N7002

Marking：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

2N7002

Marking：702；Package：SOT-23；SMD Signal DMOS Transistor (N-Channel)

Features •VoltageControlledSmallSignalSwitch •HighDensityCellDesignforLowRDS(ON) •RuggedandReliable •HighSaturationCurrentCapablity •RoHSCompliance

2N7002

Marking：702；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES *60VoltVCEO

2N7002

Marking：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused