丝印：70；Package：SC-70；Schottky barrier single diode

1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 3. Applicatio

文件：595.22 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：70；Package：SOT323；Schottky barrier single diode

1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and

文件：197.47 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：70；Package：TSSOP6；General-purpose quadruple Schottky diode

1. General description General-purpose quadruple Schottky diode in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance 3. Applications • Ultra high-sp

文件：904.11 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：70；Package：TSSOP6；General-purpose quadruple Schottky diode

1. General description General-purpose quadruple Schottky diode in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • Qualified according to AEC-Q101

文件：206.62 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：70；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：702；Package：SOT-23；N-Channel Enhancement Mode MOSFET

■ Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：74.34 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：116.2 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：702*；Package：SOT-23；N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

文件：30.9 Kbytes 页数：4 Pages

SUTEX

丝印：702；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

文件：25.02 Kbytes 页数：1 Pages

Zetex