2N7002

Marking：702；Package：SOT-23；N-CHANNEL ENHANCEMENT-MODE MOSFET

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications.

2N7002

Marking：702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

2N7002

Marking：7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE *HighdensitycelldesignforlowRDS(ON) *Voltagecontrolledsmallsignalswitch *Ruggedandreliable *Highsaturationcurrentcapability

2N7002

Marking：7002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=0.115A RDS(ON)

2N7002

Marking：7002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=0.115A RDS(ON)

2N7002

Marking：7002；Package：SOT-23；MOSFET

FEATURE HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability APPLICATION LoadSwitchforPortableDevices DC/DCConverter

2N7002

Marking：7002；Package：SOT23；60V N-Channel Mosfet

Application ®Dictlogi-fevlinterface:TTLICMOS ®Drivers:relays,solenoids,lamps,hammers,display, memories,ransistors,tc. ®Batteryoperatedsystems ®Soicstaterelays

2N7002

Marking：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

2N7002

Marking：702*；Package：SOT-23；N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

2N7002

Marking：7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)