丝印：1PS；Package：SC70；INA185 26-V, 350-kHz, Bidirectional, High-Precision Current Sense Amplifier in Ultra- Small (SOT-563) Package

1 Features • SC70 and SOT-563 packages – SC70 offers compatibility to existing solutions – SOT-563 is 39 smaller footprint than SC70 – SOT-563 dimensions is 1.6 mm × 1.6 mm × 0.55 mm • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±55

文件：1.60396 Mbytes 页数：35 Pages

TI

德州仪器

Schottky barrier diode

DESCRIPTION An epitaxial Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package. ESD sensitive device, observe handling precautions. FEATURES • Low forward voltage • Low diode capacitance • Leadless ultra small plastic package (1.0 mm × 0.6 mm × 0.5 mm

文件：99.28 Kbytes 页数：7 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：S5；Package：DFN1006-2；Schottky barrier diode

1. General description An epitaxial Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package. ESD sensitive device, observe handling precautions. 2. Features and benefits • Low forward voltage • Low diode capacitance • Leadless ultra small plastic package (1.0 m

文件：177.3 Kbytes 页数：8 Pages

NEXPERIA

安世

High-speed double diode

DESCRIPTION The 1PS181 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 80 V

文件：32.549 Kbytes 页数：6 Pages

PHI

PHI

High-speed double diode

DESCRIPTION The 1PS184 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 80 V

文件：32.49 Kbytes 页数：6 Pages

PHI

PHI

High-Speed Double Diode

Features ● Small plastic SMD package ● High switching speed: max. 4 ns ● Continuous reverse voltage:max. 80 V ● Repetitive peak reverse voltage:max. 85 V ● Repetitive peak forward current:max. 500 mA.

文件：42.79 Kbytes 页数：1 Pages

KEXIN

科信电子

High-speed double diode

DESCRIPTION The 1PS226 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 80 V • Re

文件：32.509 Kbytes 页数：6 Pages

PHI

PHI

High-speed double diode

DESCRIPTION The 1PS300 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the very small rectangular SOT323 (SC-70) plastic SMD package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous r

文件：52.74 Kbytes 页数：8 Pages

PHI

PHI

High-speed double diode

General description Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 2 pF ■ Repetitive peak reverse voltage: VRRM ≤ 85 V ■ Repetitive pea

文件：127.62 Kbytes 页数：8 Pages

恩XP