丝印：A3；Package：SC-70；Dual high-speed switching diode

Features and benefits  High switching speed: trr  4 ns  Repetitive peak reverse voltage: VRRM  85 V  Reverse voltage: VR  80 V  AEC-Q101 qualified  Low capacitance: Cd  2 pF  Repetitive peak forward current: IFRM  500 mA  Very small SMD plastic package

文件：749.77 Kbytes 页数：11 Pages

NEXPERIA

安世

High-speed double diode

DESCRIPTION The 1PS301 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the very small rectangular plastic SMD SC70-3 package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse

文件：52.71 Kbytes 页数：8 Pages

PHI

PHI

High-speed double diode

General description Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 1.5 pF ■ Repetitive peak reverse voltage: VRRM ≤ 85 V ■ Repetitive p

文件：114.57 Kbytes 页数：8 Pages

恩XP

丝印：B3；Package：SC-70；Dual high-speed switching diode

Features and benefits  High switching speed: trr  4 ns  Repetitive peak reverse voltage: VRRM  85 V  Reverse voltage: VR  80 V  AEC-Q101 qualified  Low capacitance: Cd  1.5 pF  Repetitive peak forward current: IFRM  500 mA  Very small SMD plastic package

文件：810.38 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：C3；Package：SC-70；Dual high-speed switching diode

Features and benefits  High switching speed: trr  4 ns  Repetitive peak reverse voltage: VRRM  85 V  Reverse voltage: VR  80 V  AEC-Q101 qualified  Low capacitance: Cd  1.5 pF  Repetitive peak forward current: IFRM  500 mA  Very small SMD plastic package

文件：787.66 Kbytes 页数：11 Pages

NEXPERIA

安世

High-speed double diode

DESCRIPTION The 1PS302 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the very small rectangular plastic SMD SC70-3 package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse

文件：52.74 Kbytes 页数：8 Pages

PHI

PHI

High-speed double diode

General description Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 1.5 pF ■ Repetitive peak reverse voltage: VRRM ≤ 85 V ■ Repetitive p

文件：128.05 Kbytes 页数：8 Pages

恩XP

General purpose PIN diode

Features • Low forward resistance • Low capacitance Applications • General RF applications

文件：304.33 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

Schottky Barrier (Double) Diodes

Features ● Low forward voltage ● Guard ring protoected ● Small SMD package.

文件：38.05 Kbytes 页数：1 Pages

KEXIN

科信电子

Schottky Barrier (Double) Diodes

Features ● Low forward voltage ● Guard ring protoected ● Small SMD package.

文件：38.05 Kbytes 页数：1 Pages

KEXIN

科信电子