丝印：1PS；Package：SC70；INA185 26-V, 350-kHz, Bidirectional, High-Precision Current Sense Amplifier in Ultra- Small (SOT-563) Package

1 Features • SC70 and SOT-563 packages – SC70 offers compatibility to existing solutions – SOT-563 is 39 smaller footprint than SC70 – SOT-563 dimensions is 1.6 mm × 1.6 mm × 0.55 mm • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±55

文件：1.60396 Mbytes 页数：35 Pages

TI

德州仪器

丝印：S5；Package：DFN1006-2；Schottky barrier diode

1. General description An epitaxial Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package. ESD sensitive device, observe handling precautions. 2. Features and benefits • Low forward voltage • Low diode capacitance • Leadless ultra small plastic package (1.0 m

文件：177.3 Kbytes 页数：8 Pages

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丝印：A3；Package：SC-70；Dual high-speed switching diode

Features and benefits  High switching speed: trr  4 ns  Repetitive peak reverse voltage: VRRM  85 V  Reverse voltage: VR  80 V  AEC-Q101 qualified  Low capacitance: Cd  2 pF  Repetitive peak forward current: IFRM  500 mA  Very small SMD plastic package

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安世安世半导体(中国)有限公司

丝印：B3；Package：SC-70；Dual high-speed switching diode

Features and benefits  High switching speed: trr  4 ns  Repetitive peak reverse voltage: VRRM  85 V  Reverse voltage: VR  80 V  AEC-Q101 qualified  Low capacitance: Cd  1.5 pF  Repetitive peak forward current: IFRM  500 mA  Very small SMD plastic package

文件：810.38 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：C3；Package：SC-70；Dual high-speed switching diode

Features and benefits  High switching speed: trr  4 ns  Repetitive peak reverse voltage: VRRM  85 V  Reverse voltage: VR  80 V  AEC-Q101 qualified  Low capacitance: Cd  1.5 pF  Repetitive peak forward current: IFRM  500 mA  Very small SMD plastic package

文件：787.66 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：N2；Package：SOT666；4 V, 30 mA low capacitance Schottky barrier diode

1. General description Triple isolated planar low capacitance Schottky barrier diode encapsulated in a SOT666 ultra small flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 3 isolated diodes • Very low diode capacitance • Very low forward voltage • Ultra sm

文件：180.92 Kbytes 页数：7 Pages

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丝印：N5；Package：SOT666；15 V, 30 mA low Cd Schottky barrier diodes

1.1 General description Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic packages. 1.2 Features Low diode capacitance Low forward voltage Very small SMD plastic packages 1.3 Applications Digital applications: Ultra high-speed switching Clampi

文件：697.18 Kbytes 页数：10 Pages

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丝印：70；Package：SC-70；Schottky barrier single diode

1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 3. Applicatio

文件：595.22 Kbytes 页数：9 Pages

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丝印：70；Package：SOT323；Schottky barrier single diode

1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and

文件：197.47 Kbytes 页数：8 Pages

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丝印：74；Package：SC-70；Dual Schottky barrier diode

1. General description Dual Planar Schottky barrier diode in series configuration with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance

文件：3.45741 Mbytes 页数：9 Pages

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