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1N68

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件:2.79285 Mbytes 页数:78 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1N68

GOLD BOUNDED GERMANUM DIODE

NJS

新泽西半导体

1N6815

LOW VOLTAGE DROP SCHOTTKY DIODE

Features • Tungsten/Platinum schottky barrier for very low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface moun

文件:76.45 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N6815R

LOW VOLTAGE DROP SCHOTTKY DIODE

Features • Tungsten/Platinum schottky barrier for very low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface moun

文件:76.45 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N6816

LOW LEAKAGE SCHOTTKY DIODE

Features • Tungsten schottky barrier • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface mount power package • Low pa

文件:77.19 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N6816R

LOW LEAKAGE SCHOTTKY DIODE

Features • Tungsten schottky barrier • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface mount power package • Low pa

文件:77.19 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N6817

LOW REVERSE LEAKAGE SCHOTTKY DIODE

LOW REVERSE LEAKAGE SCHOTTKY DIODE 100 Volts 25 Amps Features • Tungsten schottky barrier • Oxide passivated structure • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile

文件:140.81 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N6817R

LOW REVERSE LEAKAGE SCHOTTKY DIODE

LOW REVERSE LEAKAGE SCHOTTKY DIODE 100 Volts 25 Amps Features • Tungsten schottky barrier • Oxide passivated structure • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile

文件:140.81 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N6818

LOW VOLTAGE DROP SCHOTTKY DIODE

Features • Tungsten/Platinum schottky barrier for very low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface moun

文件:88.48 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N6818R

LOW VOLTAGE DROP SCHOTTKY DIODE

Features • Tungsten/Platinum schottky barrier for very low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface moun

文件:88.48 Kbytes 页数:2 Pages

MICROSEMI

美高森美

技术参数

  • Io(mA):

    500

  • Trr (nS):

    30

  • Package:

    Axial-leaded

  • Terminations:

    Leads

供应商型号品牌批号封装库存备注价格
IR
24+
SMD
1680
IR专营品牌进口原装现货假一赔十
询价
Microsemi
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
INFINEON/英飞凌
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MICROSEMI
25+
SMD
326
就找我吧!--邀您体验愉快问购元件!
询价
VMI
2022+
DIP
8000
只做原装支持实单,有单必成。
询价
MSC
25+
7
公司优势库存 热卖中!!!
询价
23+
SOT23-5
452585
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
IR
22+
N/A
6000
终端可免费供样,支持BOM配单
询价
VMI
2023+
DIP
50000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
MICROCHIP
23+
7300
专注配单,只做原装进口现货
询价
更多1N68供应商 更新时间2026-4-17 17:08:00