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IXTH1N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH1N100

HighVoltageMOSFET

N-ChannelEnhancementMode AvalancheEnergyRated Features ●Internationalstandardpackages ●Highvoltage,LowRDS(on)HDMOS™process ●Ruggedpolysilicongatecellstructure ●Fastswitchingtimes Applications ●Switch-modeandresonant-modepowersupplies ●Flybackinverters ●DCcho

IXYS

IXYS Corporation

IXTP1N100

HighVoltageMOSFET

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb

IXYS

IXYS Corporation

IXTP1N100P

iscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤15Ω@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-Mo

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP1N100P

PolarPowerMOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications

IXYS

IXYS Corporation

IXTT1N100

HighVoltageMOSFET

N-ChannelEnhancementMode AvalancheEnergyRated Features ●Internationalstandardpackages ●Highvoltage,LowRDS(on)HDMOS™process ●Ruggedpolysilicongatecellstructure ●Fastswitchingtimes Applications ●Switch-modeandresonant-modepowersupplies ●Flybackinverters ●DCcho

IXYS

IXYS Corporation

IXTY1N100P

PolarPowerMOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications

IXYS

IXYS Corporation

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

DESCRIPTION TheMM196isaMulti-ChipModule,MCM,incorporating6independentMOSFETdieintoaconvenientBGApackage.ThisdeviceisalsoavailableasdiscreteindividualpackagedPowermite3,seeMicrosemidatasheetUPF1N100.Thisdeviceisalsoavailableasbaredie,seeMicrosemidatasheet

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MTB1N100E

TMOSPOWERFET1.0AMPERES1000VOLTS

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilit

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

详细参数

  • 型号:

    1N100A

  • 制造商:

    Solid State Devices Inc(SSDI)

  • 功能描述:

    DO 7 Glass Germainuim Diodes

供应商型号品牌批号封装库存备注价格
BKC
N/A
73
询价
日立/ST
23+
DIPSMD
26000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
ANY
422
全新原装 货期两周
询价
MICROSEMI
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
MICROSEMI
23+
7600
专注配单,只做原装进口现货
询价
MICROSEMI
23+
7600
专注配单,只做原装进口现货
询价
MSC
2023+
MODULE
2586
主打螺丝模块系列
询价
2020+
原厂封装
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多1N100A供应商 更新时间2025-7-25 16:20:00