Polar Power MOSFET

Polar Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Applications

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Switch-Mode and Resonant-Mo

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ISC

无锡固电

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

DESCRIPTION The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent MOSFET die into a convenient BGA package. This device is also available as discrete individual packaged Powermite3, see Microsemi data sheet UPF1N100. This device is also available as bare die, see Microsemi data sheet

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MICROSEMI

美高森美

TMOS POWER FET 1.0 AMPERES 1000 VOLTS

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on)= 9.0 OHM The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilit

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MOTOROLA

摩托罗拉

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

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MOTOROLA

摩托罗拉