Polar Power MOSFET

Polar Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Applications

文件：153.86 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Switch-Mode and Resonant-Mo

文件：294.31 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

High Voltage MOSFET

N-Channel Enhancement Mode Avalanche Energy Rated Features ● International standard packages ● High voltage, Low RDS(on) HDMOS™ process ● Rugged polysilicon gate cell structure ● Fast switching times Applications ● Switch-mode and resonant-mode power supplies ● Flyback inverters ● DC cho

文件：87.69 Kbytes 页数：2 Pages

IXYS

艾赛斯

Polar Power MOSFET

Polar Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Applications

文件：153.86 Kbytes 页数：4 Pages

IXYS

艾赛斯

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

DESCRIPTION The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent MOSFET die into a convenient BGA package. This device is also available as discrete individual packaged Powermite3, see Microsemi data sheet UPF1N100. This device is also available as bare die, see Microsemi data sheet

文件：78.02 Kbytes 页数：3 Pages

Microsemi

美高森美