丝印：1D1N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：131.95 Kbytes 页数：6 Pages

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丝印：1D1N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：149.14 Kbytes 页数：7 Pages

ONSEMI

安森美半导体