14A, 600V N-CHANNEL POWER MOSFET

 FEATURES * RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness

文件：436.78 Kbytes 页数：9 Pages

UTC

友顺

14A, 600V N-CHANNEL POWER MOSFET

The UTC 14N60-TC are N-Channel enhancement modepower field effect transistors (MOSFET) which are producedusing UTC’s proprietary, planar stripe, DMOS technology.These devices are suited for high efficiency switch modepower supply. To minimize on-state resistance, provide superiorswitching performanc RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=7.0A Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness;

UTC

友顺

N-Channel Enhancement Mode MOSFET

文件：249.73 Kbytes 页数：4 Pages

DACO

罡境电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =14A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.49Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.18 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHV HiperFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ◆ International standard packages ◆ Avalanche rated Advantages ◆ Easy to mount ◆ Space savings ◆ High power density Applications: ◆ Switched-mode and resonant-mode power supplies ◆ DC-DC Converters ◆ Laser Driver

文件：158.35 Kbytes 页数：5 Pages

IXYS

艾赛斯