DAM14N60S

N-Channel Enhancement Mode MOSFET

FDP14N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.49Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

IXFA14N60P

PolarHVHiperFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXFA14N60P

PowerMOSFET

DAN202KT146

ROHM/罗姆
SOT23-3

ROHM/罗姆