IXFA14N60P规格书贸易商无锡固电IXYS-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFA14N60P	文件：158.35 Kbytes Page：5 Pages	PolarHV HiperFET Power MOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver	IXYS IXYS Integrated Circuits Division	IXYS
IXFA14N60P	文件：333 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFA14N60P	文件：338.44 Kbytes Page：7 Pages	Power MOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFA14N60P3	文件：333.73 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.54Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFA14N60P_V01	文件：338.44 Kbytes Page：7 Pages	Power MOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFA14N60P3	文件：282.67 Kbytes Page：6 Pages	N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier	IXYS IXYS Integrated Circuits Division	IXYS
14N60	文件：136.1 Kbytes Page：2 Pages	DrainCurrentID=14A@TC=25C	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
14N60-ML	文件：281.55 Kbytes Page：7 Pages	14A,600VN-CHANNELPOWERMOSFET FEATURES RDS(ON)≤0.55Ω@VGS=10V,ID=7.0A Fastswitchingcapability Avalancheenergytested Improveddv/dtcapability,highruggedness	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
14N60-TC	文件：436.78 Kbytes Page：9 Pages	14A,600VN-CHANNELPOWERMOSFET FEATURES RDS(ON)≤0.6Ω@VGS=10V,ID=7.0A Fastswitchingcapability Avalancheenergyspecified Improveddv/dtcapability,highruggedness	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
DAM14N60S	文件：249.73 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
FDP14N60	文件：332.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.49Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFC14N60P	文件：323.7 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.63Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFC14N60P	文件：152.61 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFH14N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFH14N60P	文件：158.35 Kbytes Page：5 Pages	PolarHVHiperFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver	IXYS IXYS Integrated Circuits Division	IXYS
IXFH14N60P	文件：338.44 Kbytes Page：7 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFH14N60P	文件：372.22 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP14N60	文件：295.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=550mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP14N60P	文件：158.35 Kbytes Page：5 Pages	PolarHVHiperFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver	IXYS IXYS Integrated Circuits Division	IXYS
IXFP14N60P	文件：338.44 Kbytes Page：7 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS

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详细参数

型号：
IXFA14N60P
功能描述：
MOSFET 600V 14A
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXFA14N60P	IXYS	24+	TO-263(IXFA)	30000	晶体管-分立半导体产品-原装正品	询价
深圳市宏捷佳电子科技有限公司	IXFA14N60P	IXYS	23+	TO-263	12300	全新原装真实库存含13点增值税票!	询价
深圳市毅创辉电子科技有限公司	IXFA14N60P	IXYS	23+	DIP18	6000	15年原装正品企业	询价
深圳市特顺芯科技有限公司	IXFA14N60P	IXYS	08+(pbfree)	TO-263	8866		询价
深圳市华来深电子有限公司	IXFA14N60P	IXYS	23+	TO-263-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市百视威讯电子科技有限公司	IXFA14N60P		23+	N/A	36200	正品授权货源可靠	询价
深圳兆威电子有限公司	IXFA14N60P	IXYS	20+	TO-263-3	90000	全新原装正品/库存充足	询价
深圳市威尔健半导体有限公司	IXFA14N60P	SANYO/三洋	23+	TO-251	69820	终端可以免费供样,支持BOM配单!	询价
深圳市艾宇欣科技有限公司	IXFA14N60P	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IXFA14N60P	IXYS	1809+	TO-263	1675	就找我吧!--邀您体验愉快问购元件!	询价

更多IXFA14N60P供应商更新时间2024-5-15 14:13:00

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