14N60-ML

14A, 600V N-CHANNEL POWER MOSFET

FEATURES *RDS(ON)≤0.55Ω@VGS=10V,ID=7.0A *Fastswitchingcapability *Avalancheenergytested *Improveddv/dtcapability,highruggedness

14N60-TC

14A,600VN-CHANNELPOWERMOSFET

FEATURES *RDS(ON)≤0.6Ω@VGS=10V,ID=7.0A *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

DAM14N60S

N-ChannelEnhancementModeMOSFET

FDP14N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.49Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

IXFA14N60P

PowerMOSFET

IXFA14N60P

PolarHVHiperFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXFA14N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

IXFC14N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.63Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

IXFC14N60P

PolarHVHiPerFETPowerMOSFET

IXFH14N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.